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| AO4490 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4490/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a load switch and general purpose applications. AO4490 and AO4490L are electrically identical. -RoHS Compliant -AO4490L is Halogen Free Features VDS (V) = 30V (VGS = 10V) ID = 16A RDS(ON) < 7.2m (VGS = 10V) RDS(ON) < 10m (VGS = 4.5V) ESD protected UIS Tested! Rg, Ciss,Coss,Crss Tested S S S G D D D D D G S SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Avalanche Current G Repetitive avalanche energy L=0.3mH G TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C B Maximum 30 20 16 13 120 30 135 2.8 1.8 -55 to 150 Units V V A A mJ W C TA=25C TA=70C ID IDM IAR EAR PD TJ, TSTG Symbol t 10s Steady-State Steady-State RJA RJL Typ 32 62 18 Max 45 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4490 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=12A Forward Transconductance VDS=5V, ID=16A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 16V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=16A TJ=125C 1.4 120 6 8.5 8 55 0.70 1.0 4 1803 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 387 238 1.3 36 VGS=10V, VDS=15V, ID=16A 19 3.9 8.7 7.6 VGS=10V, VDS=15V, RL=1, RGEN=3 IF=16A, dI/dt=100A/s 6.4 27 8.5 27 17 33 2 48 2170 7.2 10 10 1.8 Min 30 1 5 10 2.5 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=16A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse. Rev2: Feb 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4490 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 10V 5V 90 6V ID (A) 60 20 VGS=3.5V ID(A) 15 10 30 3V 5 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 10.0 VGS=4.5V 8.0 RDS(ON) (m) Normalized On-Resistance 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 1.6 1.4 1.2 1 0.8 0.6 0 5 10 15 20 25 30 -60 -30 0 30 60 90 120 150 180 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V ID=16A -40C 125 25C 4.5V 4V 25 30 VDS=5V 6.0 VGS=10V 4.0 VGS=4.5V ID=12A 2.0 20 ID=16 15 RDS(ON) (m) IS (A) 1.0E+02 1.0E+01 1.0E+00 125C 1.0E-01 1.0E-02 -40C 1.0E-03 25C 1.0E-04 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C 10 5 0 Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4490 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 500 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 VDS=15V ID=16A Capacitance (pF) 3500 3000 2500 2000 1500 1000 Coss Crss Ciss 1000.0 10s 100.0 10.0 1.0 0.1 0.0 0.01 100 1ms DC TJ(Max)=150C TA=25C 1s Power (W) ID (Amps) RDS(ON) limited 10ms 10s 100 80 60 40 20 0 0.0001 0.001 TJ(Max)=150C TA=25C 0.1 1 VDS (Volts) 10 100 0.01 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4490 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 TA=10S Power Dissipation (W) 2 1 TA=Steady-State 0 0 25 50 75 100 125 150 175 T Ambient (C) Figure 12: Power De-rating (Note A) Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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